LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed
in the SOT–323/SC–70 which is designed for low power surface mount applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
Symbol
V
CEO
V
CBO
V
EBO
Value
40
– 40
60
– 40
6.0
– 5.0
200
– 200
Unit
Vdc
Vdc
Vdc
mAdc
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
I
C
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (1)
T
A
=25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
CASE 419–02, STYLE 3
SOT– 323 / SC–70
DEVICE MARKING
MMBT3904WT1 = AM; MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
(I
C
= –10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
(I
E
= –10
µAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V
(BR)CEO
40
– 40
60
– 40
—
—
—
—
Vdc
V
(BR)CBO
Vdc
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V
(
BR)EBO
6.0
– 5.0
—
—
50
-50
50
– 50
Vdc
I
BL
—
—
—
—
nAdc
I
CEX
nAdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
K3–1/9
LRC [ LESHAN RADIO COMPANY ]
