LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MMBT4401LT1
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
1.8
556
300
2.4
417
–55 to +150
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
225
Unit
mW
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
V
(BR)CEO
40
V
(BR)CBO
60
V
(BR)EBO
Vdc
—
Vdc
—
Vdc
6.0
—
µAdc
—
0.1
µAdc
—
0.1
I
BEV
I
CEX
O14–1/5
LRC [ LESHAN RADIO COMPANY ]
