LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
PNP Silicon
3
COLLECTOR
3
1
BASE
MMBT5087LT1
1
2
EMITTER
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 50
– 50
– 3.0
– 50
Unit
Vdc
Vdc
Vdc
mAdc
DEVICE MARKING
MMBT5087LT=2Q
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation RF-5 Board (1)
T
A
=25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J
, T
stg
417
–55to+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
V
(BR)CBO
I
CBO
—
—
–10
–50
Min
– 50
– 50
Max
—
—
Unit
Vdc
Vdc
n Adc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –100
µAdc,
I
E
= 0)
Collector Cutoff Current
(V
CB
= –10 Vdc, I
E
= 0)
(V
CB
= –35 Vdc, I
E
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M17–1/6
LRC [ LESHAN RADIO COMPANY ]
