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MMBT5088LT1 参数 Datasheet PDF下载

MMBT5088LT1图片预览
型号: MMBT5088LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声晶体管( NPN硅) [Low Noise Transistors(NPN Silicon)]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 209 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
Low Noise Transistors
NPN Silicon
COLLECTOR
3
MMBT5088LT1
MMBT5089LT1
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
5088LT
30
35
4.5
50
15089LT1
25
30
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T
A
=25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to + 150
Unit
mW
mW/ °C
°C/W
mW
mW/ °C
°C/W
°C
R
θJA
P
D
Total Device Dissipation
Alumina Substrate,(2) T
A
=25
°C
Derate above 25
°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
MMBT5088
MMBT5089
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0)
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0 )
(V
CB
Min
Max
Unit
Vdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
30
25
V
(BR)CBO
MMBT5088
MMBT5089
I
CBO
MMBT5088
MMBT5089
50
50
35
30
nAdc
Vdc
= 15 Vdc, I
E
= 0 )
Emitter Cutoff Current
(V
EB(off)
= 3.0Vdc, I
C
= 0)
MMBT5088
I
EBO
nAdc
50
100
(V
EB(off)
= 4.5Vdc, I
C
= 0)
MMBT5089
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M18–1/4