LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
1
BASE
3
COLLECTOR
MMBT5550LT1
MMBT5551LT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
EMITTER
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
( V
CB
= 100Vdc, I
E
= 0)
( V
CB
= 120Vdc, I
E
= 0)
( V
CB
= 100Vdc, I
E
= 0, T
A
=100 °C)
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 °C)
Emitter Cutoff Current
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
I
EBO
—
—
—
—
—
100
50
100
50
50
nAdc
µAdc
nAdc
MMBT5550
MMBT5551
V
(BR)EBO
V
(BR)CEO
140
160
V
(BR)CBO
160
180
6.0
—
—
—
—
Vdc
MMBT5550
MMBT5551
Vdc
Vdc
—
M20–1/4
LRC [ LESHAN RADIO COMPANY ]
