LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
MMBT6517LT1
3
COLLECTOR
1
BASE
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Base Current
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
350
350
5.0
250
500
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
B
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
P
D
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 1.0 mAdc )
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc
)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc
)
Collector Cutoff Current
( V
CB
= 250Vdc )
Emitter Cutoff Current
( V
EB
= 5.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
350
350
6.0
—
—
—
—
—
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
I
CBO
I
EBO
M23–1/5
LRC [ LESHAN RADIO COMPANY ]
