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MMBTA43LT1 参数 Datasheet PDF下载

MMBTA43LT1图片预览
型号: MMBTA43LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( NPN硅) [High Voltage Transistors(NPN Silicon)]
分类和应用: 晶体晶体管高压
文件页数/大小: 3 页 / 101 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号MMBTA43LT1的Datasheet PDF文件第1页浏览型号MMBTA43LT1的Datasheet PDF文件第3页  
LESHAN RADIO COMPANY, LTD.
MMBTA42LT1 MMBTA43LT1
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
Both Types
Both Types
MMBTA42
MMBTA43
V
CE(sat)
MMBTA42
MMBTA43
V
BE(sat)
Min
Max
Unit
––
ON CHARACTERISTICS (3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
25
40
40
40
Vdc
0.5
0.5
0.9
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product
(V
CE
= 20 Vdc, I
C
= 10mA, f = 100 MHz)
Collector – Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
MMBTA42
MMBTA43
f
T
C
cb
3.0
4.0
50
MHz
pF
M28–2/3