LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
3
COLLECTOR
MMBTA55LT1
MMBTA56LT1
3
1
BASE
2
EMITTER
1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
Value
MMBTA55 MMBTA56
–60
–60
–4.0
–500
–80
–80
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= –1.0 mAdc, I
B
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= –100
µAdc,
I
C
= 0 )
Collector Cutoff Current
( V
CE
= –60Vdc, I
B
= 0)
Collector Cutoff Current
( V
CB
= –60Vdc, I
E
= 0)
( V
CB
= –80Vdc, I
E
= 0)
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V
(BR)EBO
V
(BR)CEO
Vdc
–60
–80
–4.0
—
—
—
—
–0.1
Vdc
µAdc
µAdc
—
—
–0.1
–0.1
I
CEO
I
CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
M29–1/2
LRC [ LESHAN RADIO COMPANY ]
