LESHAN RADIO COMPANY, LTD.
Darlington Transistors
PNP Silicon
3
COLLECTOR
MMBTA63LT1
MMBTA64LT1
3
1
BASE
1
2
2
EMITTER
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CES
V
CBO
V
EBO
Value
–30
–30
–10
–500
Unit
Vdc
Vdc
Vdc
mAdc
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
1.8
556
300
2.4
417
–55 to +150
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
225
Unit
mW
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –100
µAdc,
)
Collector Cutoff Current
( V
CB
= –30Vdc)
Emitter Cutoff Current
( V
EB
= –10Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
I
CBO
I
EBO
–30
—
—
—
–100
–100
Vdc
nAdc
nAdc
M30–1/3
LRC [ LESHAN RADIO COMPANY ]
