LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
3
COLLECTOR
1
BASE
MMBTA92LT1
MMBTA93LT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
V
V
CEO
CBO
EBO
2
EMITTER
Value
MMBTA92 MMBTA93
–300
–300
–5.0
–500
–200
–200
1
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBTA92LT1 = 2D, MMBTA93LT1 = 2E
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= –100
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –100
µAdc,
I
C
= 0)
Collector Cutoff Current
( V
CB
= –200Vdc, I
E
= 0)
( V
CB
= –160Vdc, I
E
= 0)
Collector Cutoff Current
( V
CB
= –3.0Vdc, I
C
= 0)
MMBTA92
MMBTA93
V
(BR)EBO
V
MMBTA92
MMBTA93
V
(BR)CEO
Vdc
–300
–200
—
—
Vdc
–300
–200
–5.0
—
—
—
Vdc
nAdc
—
—
–0.25
–0.25
–0.1
µAdc
(BR)CBO
I
CBO
MMBTA92
MMBTA93
I
EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
M32–1/3
LRC [ LESHAN RADIO COMPANY ]
