LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MMBV109LT1
MBV109T1
MV209
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation
@T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
MBV109T1
V
R
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Value
MMBV109LT1
30
200
Unit
MV209
Vdc
mAdc
200
1.6
mW
mW/°C
°C
°C
I
F
P
D
280
2.8
T
J
T
stg
200
2.0
+125
–55 to +150
DEVICEMARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
( I
R
= 10
µ
Adc)
Reverse Voltage Leakage Current
( V
R
= 25Vdc)
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
I
R
TC
C
Min
30
—
—
Typ
—
—
300
Max
—
0.1
—
Unit
Vdc
mAdc
ppm/°C
C
T
Diode Capacitance
V
R
=3.0Vdc, f =1.0MHz
pF
Device Type
MBV109T1, MMBV109LT1, MV209
Min
26
Nom
29
Max
32
Q, Figure of
Merit
V
R
= 3.0Vdc
f = 50MHz
Min
200
C
R,
Capacitance
Ratio
C
3
/ C
25
f=1.0MHz (Note 1)
Min
5.0
Max
6.5
1. C
R
is the ratio of C
t
measured at 3 V dc divided by C
t
measured at 25 Vdc.
MMBV109LT1
is also available in bulk packaging. Use
MMBV109L
as the device title to order this device in bulk.
MBV109. MMBV109*. MV209*–1/2
LRC [ LESHAN RADIO COMPANY ]
