LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and
tuning, or any top–of–the–line application requiring back–to–back diode
configuration for minimum signal distortion and detuning. This device is
supplied in the SOT–23 plastic package for high volume, pick and place
assembly requirements.
•
High Figure of Merit
—
Q = 450 (Typ) @ V
R
= 3.0 Vdc, f = 50 MHz
•
Guaranteed Capacitance Range
•
Dual Diodes – Save Space and Reduce Cost
•
Surface Mount Package
•
Available in 8 mm Tape and Reel
•
Monolithic Chip Provides Improved Matching
•
Hyper Abrupt Junction Process Provides High Tuning Ratio
1
2
MMBV609LT1
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
1
2
3
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
20
100
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV609LT1=5L
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10µAdc)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Diode Capacitance
(V
R
=3.0 Vdc,f=1.0MHz)
Capacitance Ratio C3/C8
(f=1.0MHz)
Figure of Merit
(V
R
=3.0 Vdc, f=50MHz)
Symbol
V
(BR)R
I
R
C
T
C
R
Q
Min
20
—
26
1.8
250
Typ
—
—
—
—
450
Max
—
10
32
2.4
—
Unit
Vdc
nAdc
pF
—
—
MMBV609LT1–1/2
LRC [ LESHAN RADIO COMPANY ]
