LESHAN RADIO COMPANY, LTD.
Silicon Hot–Carrier Diodes
Schottky Barrier Diode
MMDL301T1
These devices are designed primarily for high–efficiency UHF and VHF
detector applications. They are readily adaptable to many other fast switching
RF and digital applications. They are supplied in an inexpensive plastic package
for low–cost, high–volume consumer and industrial/commercial requirements.
They are available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ V
R
= 15 V
• Low Reverse Leakage – I
R
= 13 nAdc (Typ)
• Device Marking: 4T
30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
1
2
1
CATHODE
2
ANODE
PLASTIC SOD– 323
CASE 477
MAXIMUM RATINGS
( T
J
=125°C unless otherwise noted )
Symbol
V
R
Rating
Reverse Voltage
Value
30
Unit
Volts
THERMAL CHARACTERISTICS
Symbol
P
D
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
MMDL301T1
Package
SOD–323
Shipping
3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
µA)
Diode Capacitance
(V
R
= 15 V, f = 1.0MHz) Figure 1
Reverse Leakage
(V
R
= 25 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
V
F
Min
30
Typ
—
Max
—
Unit
Volts
pF
nAdc
Vdc
Vdc
—
—
—
—
0.9
13
0.38
0.52
1.5
200
0.45
0.6
F
S2–1/3
LRC [ LESHAN RADIO COMPANY ]
