LESHAN RADIO COMPANY, LTD.
High –Speed Switching Diode
MMDL914T1
1
CATHODE
2
ANODE
1
2
CASE 477– 02, STYLE 1
SOD– 323
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
P
D
Max
200
1.57
635
150
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
DEVICE MARKING
MMDL914T1 = 5D
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFFCHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100
µAdc)
Reverse Voltage Leakage Current
(V
R
= 20Vdc)
(V
R
= 75Vdc)
Diode Voltage
(V
R
=0, f =1.0MHz )
Forward Voltage
(I
F
= 10 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc ) (Figure 1)
V
(BR)
I
R
—
—
C
T
V
F
100
—
Vdc
25
5.0
4.0
1.0
4.0
nAdc
µAdc
pF
Vdc
ns
—
—
—
t
rr
S5–1/3