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MSD602-RT1 参数 Datasheet PDF下载

MSD602-RT1图片预览
型号: MSD602-RT1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用放大器晶体管表面贴装 [NPN General Purpose Amplifier Transistor Surface Mount]
分类和应用: 晶体放大器晶体管
文件页数/大小: 1 页 / 41 K
品牌: LRC [ LESHAN RADIO COMPANY ]
   
LESHAN RADIO COMPANY, LTD.
NPN General Purpose Amplifier
Transistor Surface Mount
MSD602–RT1
COLLECTOR
3
3
2
1
2
BASE
1
EMITTER
CASE
318D–03, STYLE1
SC–59
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
Collector Current–Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Symbol
P
D
T
J
T
stg
Value
60
50
7.0
500
1.0
Max
200
150
–55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
Adc
Unit
mW
°C
°C
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
C
ob
Min
50
60
7.0
120
40
Max
0.1
240
0.6
15
Unit
Vdc
Vdc
Vdc
µAdc
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Collector-Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage (I
C
= 10
µAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage (I
E
= 10
µAdc,
I
C
= 0)
Collector-Base Cutoff Current (V
CB
= 20Vdc, I
E
= 0)
DC Current Gain
(1)
(V
CE
= 10 Vdc, I
C
= 150 mAdc)
(V
CE
= 10 Vdc, I
C
= 500 mAdc)
Collector-Emitter Saturation Voltage (I
C
= 300 mAdc, I
B
= 30 mAdc)
Output Capacitance(V
CB
=10Vdc,I
E
=0,f=1.0MHz)
1. Pulse Test: Pulse Width < 300
µs,
D.C < 2%.
Vdc
pF
DEVICE MARKING
Marking Symbol
WRX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N7–1/1