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MUN2212T1 参数 Datasheet PDF下载

MUN2212T1图片预览
型号: MUN2212T1
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管 [Bias Resistor Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 158 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a
series base resistor and a base–emitter resistor. The BRT eliminates these indi-
vidual components by
integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: Class 1
ESD Rating
– Machine Model: Class B
• The SC–59 package can be soldered using wave or reflow. The modified
gull–winged leads absorb thermal stress during soldering eliminating the
possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MUN2211T1
SERIES
NPN SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
SC–59
CASE 318D, STYLE 1
PIN 2
BASE
(INPUT)
R
1
PIN 3
COLLECTOR
(OUTPUT)
R
2
PIN 1
EMITTER
(GROUND)
MARKINGDIAGRAM
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table on page 2 of this data sheet.
8X
M
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R
θJA
R
θJL
T
J
, T
stg
V
CBO
V
CEO
I
C
Symbol
P
D
50
50
100
8X = Specific Device Code*
M = Date Code
Unit
Vdc
Vdc
mAdc
Max
Unit
mW
°C/W
°C/W
°C/W
°C
230(Note 1)
338(Note 2)
1.8 (Note 1)
2.7 (Note 2)
540(Note 1)
370(Note 2)
264(Note 1)
287(Note 2)
–55 to +150
MUN2211T1 Series–1/11