LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
•
High Q
•
Controlled and Uniform Tuning Ratio
•
Standard Capacitance Tolerance
—10%
•
Complete Typical Design Curves
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Forward power Dissipation @T
A
= 25°C
Derate above 25°C
Symbol
V
R
I
F
P
D
M V 2 1 X X MMBV21XXLT1 Unit
30
Vdc
200
mAdc
280
2.8
+150
–55 to +150
225
1.8
mW
mW/°C
°C
°C
Junction Temperature
Storage Temperature Range
T
J
T
stg
DEVICE MARKING
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0µAdc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25°C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
Symbol
V
(BR)R
I
R
TC
C
Min
30
—
—
Typ
—
—
280
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
MMBV2101~MMBV2109 –1/3
MV2101~MV2115
LRC [ LESHAN RADIO COMPANY ]
