乐山无线电公司, LTD 。
MUN5111DW1T1
器件标识和电阻值
设备
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1 (注3 )
MUN5116DW1T1 (注3 )
MUN5130DW1T1 (注3 )
MUN5131DW1T1 (注3 )
MUN5132DW1T1 (注3 )
MUN5133DW1T1 (注3 )
MUN5134DW1T1 (注3 )
MUN5135DW1T1 (注3 )
MUN5136DW1T1 (注3 )
MUN5137DW1T1 (注3 )
包
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
记号
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
0N
0P
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R
2
(K)
10
22
47
47
–
–
1.0
2.2
4.7
47
47
47
100
22
航运
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
3000 /磁带&卷轴
系列
电气特性
(T
A
= 25 ° C除非另有说明,常见的Q
1
和Q
2
)
特征
符号
开关特性
集电极 - 基极截止电流(V
CB
= -50 V,I
E
= 0)
I
CBO
集电极 - 发射极截止电流(V
CE
= -50 V,I
B
= 0)
I
首席执行官
I
EBO
发射基截止电流
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
集电极 - 基极击穿电压(I
C
= –10
µA,
I
E
= 0)
V
( BR ) CBO
集电极 - 发射极击穿电压(注4 )。 (我
C
= -2.0毫安,我
B
=0) V
( BR ) CEO
基本特征
(注4 )
集电极 - 发射极饱和电压(I
C
= -10mA ,我
E
= -0.3毫安)
(I
C
= -10mA ,我
B
= -5mA )
(I
C
= -10mA ,我
B
= -1mA )
MUN5130DW1T1/MUN5131DW1T1
MUN5115DW1T1/MUN5116DW1T1
V
CE ( SAT )
民
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–50
–50
–
典型值
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
最大
单位
(V
EB
= -6.0 V,I
C
= 0)
–100
NADC
–500
NADC
-0.5 MADC
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
–0.05
–0.13
–
VDC
–
VDC
–0.25
VDC
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3.新的电阻器组合。更新时间曲线跟随在后面的数据表。
4.脉冲测试:脉冲宽度< 300
µs,
占空比< 2.0 %
MUN5111dw–2/11