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LT6164DL-8I 参数 Datasheet PDF下载

LT6164DL-8I图片预览
型号: LT6164DL-8I
PDF下载: 下载PDF文件 查看货源
内容描述: 8K ×8位高速CMOS SRAM [8K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 234 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY6164
Rev. 1.4
8K X 8 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY6164-8
LY6164-10 LY6164-12 LY6164-15 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
8
-
10
-
12
-
15
-
ns
-
8
-
10
-
12
-
15
ns
-
8
-
10
-
12
-
15
ns
-
4
-
5
-
6
-
7
ns
2
-
2
-
3
-
4
-
ns
0
-
0
-
0
-
0
-
ns
-
4
-
5
-
6
-
7
ns
-
4
-
5
-
6
-
7
ns
3
-
3
-
3
-
3
-
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY6164-8
LY6164-10 LY6164-12 LY6164-15 UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
8
-
10
-
12
-
15
-
ns
6.5
-
8
-
10
-
12
-
ns
6.5
-
8
-
10
-
12
-
ns
0
-
0
-
0
-
0
-
ns
6.5
-
8
-
9
-
10
-
ns
0
-
0
-
0
-
0
-
ns
5
-
6
-
7
-
8
-
ns
0
-
0
-
0
-
0
-
ns
1.5
-
2
-
3
-
4
-
ns
-
5
-
6
-
7
-
8
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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