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LY6125616GL-25LLIT 参数 Datasheet PDF下载

LY6125616GL-25LLIT图片预览
型号: LY6125616GL-25LLIT
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256K ×16位高速CMOS SRAM [5V 256K X 16 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 362 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
CAPACITANCE
(T
A
= 25
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -8mA/16mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM.
LY6125616-10 LY6125616-15 LY6125616-20 LY6125616-25
UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
t
RC
10
-
15
-
20
25
-
ns
Address Access Time
t
AA
-
10
-
15
-
20
-
25
ns
Chip Enable Access Time
t
ACE
-
10
-
15
-
20
-
25
ns
Output Enable Access Time
t
OE
-
5
-
7
-
8
-
9
ns
Chip Enable to Output in Low-Z
t
CLZ
*
2
-
4
-
4
4
-
ns
Output Enable to Output in Low-Z t
OLZ
*
0
-
0
-
0
0
-
ns
Chip Disable to Output in High-Z t
CHZ
*
-
5
-
7
-
8
-
9
ns
Output Disable to Output in High-Z t
OHZ
*
-
5
-
7
-
8
-
9
ns
Output Hold from Address Change t
OH
3
-
3
-
3
3
-
ns
LB#, UB# Access Time
t
BA
-
5
-
7
-
8
-
9
ns
LB#, UB# to High-Z Output
t
BHZ
*
-
5
-
7
-
8
-
9
ns
LB#, UB# to Low-Z Output
t
BLZ
*
2
-
4
-
4
4
-
ns
(2) WRITE CYCLE
PARAMETER
SYM.
LY6125616-10 LY6125616-15 LY6125616-20 LY6125616-25
UNIT
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
t
WC
10
-
15
-
20
-
25
-
ns
Address Valid to End of Write
t
AW
8
-
12
-
16
-
20
-
ns
Chip Enable to End of Write
t
CW
8
-
12
-
16
-
20
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
0
-
ns
Write Pulse Width
t
WP
8
-
10
-
11
-
12
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
0
-
ns
Data to Write Time Overlap
t
DW
6
-
8
-
9
-
10
-
ns
Data Hold from End of Write Time t
DH
0
-
0
-
0
-
0
-
ns
Output Active from End of Write
t
OW
*
2
-
4
-
5
-
6
-
ns
Write to Output in High-Z
t
WHZ
*
-
6
-
8
-
9
-
10
ns
LB#, UB# Valid to End of Write
t
BW
8
-
12
-
16
-
20
-
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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