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LY612568ML-15ET 参数 Datasheet PDF下载

LY612568ML-15ET图片预览
型号: LY612568ML-15ET
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256K ×8位高速CMOS SRAM [5V 256K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 213 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY612568
Rev. 1.0
5V 256K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
NC
NC
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
WE#
A17
A16
A15
A14
A13
NC
NC
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
NC
NC
NC
A5
A6
A7
A8
OE#
DQ7
DQ6
Vss
Vcc
DQ5
DQ4
A9
A10
A11
A12
NC
NC
NC
NC
LY612568
XXXXXXX
XXXX
9
10
11
12
13
14
15
16
17
18
19
20
21
22
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP-II
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2