®
LY615128
Rev. 1.3
5V 512K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY615128 is a 4,194,304-bit low power CMOS
static random access memory organized as 524,288
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY615128 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY615128 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
FEATURES
Fast access time : 10/12/15ns
Low power consumption:
Operating current: 200/180/150mA (TYP.)
Standby current: 1mA (TYP.)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY615128
LY615128(E)
LY615128(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-45 ~ 85℃
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
10/12/15 ns
10/12/15 ns
10/12/15 ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
1mA
200/180/150mA
1mA
200/180/150mA
1mA
200/180/150mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A18
DQ0 – DQ7
DECODER
512Kx8
MEMORY ARRAY
CE#
WE#
OE#
V
CC
V
SS
NC
A0-A18
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
LYONTEK [ Lyontek Inc. ]
