®
LY615128
Rev. 1.3
5V 512K X 8 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
Output Low Voltage
V
OL
I
OL
= 8mA
-10
Cycle time = Min.
Average Operating
I
CC
CE# = V
IL
, I
I/O
= 0mA
-12
Power supply Current
Others at V
IL
or V
IH
-15
CE# = V
IH,
others at V
IL
or V
IH
I
SB
Standby Power
CE#
≧
V
CC
- 0.2V
Supply Current
I
SB1
Others at 0.2V or V
CC
- 0.2V
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
MIN.
4.5
2.2
- 0.3
-1
-1
2.4
-
-
-
-
-
-
TYP.
5.0
-
-
-
-
*4
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
280
250
220
50
10*
5
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
-
-
220
200
180
5
1
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
LYONTEK [ Lyontek Inc. ]
