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LY621024PL-55SL 参数 Datasheet PDF下载

LY621024PL-55SL图片预览
型号: LY621024PL-55SL
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位低功耗CMOS SRAM [128K X 8 BIT LOW POWER CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 16 页 / 346 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY621024  
128K X 8 BIT LOW POWER CMOS SRAM  
Rev. 1.7  
DC ELECTRICAL CHARACTERISTICS  
SYMBOL  
TEST CONDITION  
MIN.  
4.5  
2.4  
- 0.2  
- 1  
TYP. *4  
5.0  
MAX.  
5.5  
VCC+0.3  
0.6  
UNIT  
PARAMETER  
Supply Voltage  
VCC  
V
V
V
*1  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output Leakage  
Current  
VIH  
VIL  
-
-
-
*2  
ILI  
V
V
CC VIN VSS  
CC VOUT VSS,  
Output Disabled  
1
A
µ
ILO  
- 1  
-
1
A
µ
Output High Voltage  
Output Low Voltage  
VOH IOH = -1mA  
2.4  
-
-
-
-
V
V
VOL  
IOL = 2mA  
0.4  
mA  
Cycle time = Min.  
CE# = VIL and CE2 = VIH  
24  
17  
15  
80  
60  
50  
- 35  
- 55  
- 70  
-
-
-
,
mA  
mA  
ICC  
I
I/O = 0mA  
Other pins at VIL or VIH  
Cycle time = 1 s  
Average Operating  
Power supply Current  
µ
CE# = 0.2V and CE2 VCC-0.2V,  
II/O = 0mA  
ICC1  
-
2
10  
mA  
Other pins at 0.2V or VCC - 0.2V  
LL  
-
-
2
2
15  
30  
A
A
µ
µ
LLE/LLI  
CE# VCC-0.2V  
SL*5  
-
-
0.8  
1
2
2
A
25  
µ
µ
Standby Power  
Supply Current  
or CE2 0.2V  
ISB1  
SLE*5  
SLI*5  
Others at 0.2V or  
A
40  
VCC - 0.2V  
SL  
SLE/SLI  
-
-
2
2
7
10  
A
µ
A
µ
Notes:  
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.  
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.  
3. Over/Undershoot specifications are characterized, not 100% tested.  
4. Typical values are included for reference only and are not guaranteed or tested.  
Typical values are measured at VCC = VCC(TYP.) and TA = 25  
5. This parameter is measured at VCC = 3.0V  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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