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LY62256DL-55LL 参数 Datasheet PDF下载

LY62256DL-55LL图片预览
型号: LY62256DL-55LL
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8位低功耗CMOS SRAM [32K X 8 BIT LOW POWER CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 292 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY62256
Rev. 2.9
32K X 8 BIT LOW POWER CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY62256-35
MIN.
MAX.
35
-
-
35
-
35
-
25
10
-
5
-
-
15
-
15
10
-
LY62256-55
MIN.
MAX.
55
-
-
55
-
55
-
30
10
-
5
-
-
20
-
20
10
-
LY62256-70
MIN.
MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
25
-
25
10
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY62256-35
MIN.
MAX.
35
-
30
-
30
-
0
-
25
-
0
-
20
-
0
-
5
-
-
15
LY62256-55
MIN.
MAX.
55
-
50
-
50
-
0
-
45
-
0
-
25
-
0
-
5
-
-
20
LY62256-70
MIN.
MAX.
70
-
60
-
60
-
0
-
55
-
0
-
30
-
0
-
5
-
-
25
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
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