®
LY62256
Rev. 2.9
32K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
*1
V
IH
V
IL
*2
TEST CONDITION
I
LI
I
LO
V
OH
V
OL
I
CC
Average Operating
Power supply Current
I
CC1
I
SB
Standby Power
Supply Current
I
SB1
V
CC
=2.7~3.6V
V
CC
=4.5~5.5V
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -1mA
I
OL
= 2mA
-35
Cycle time = Min.
CE# = V
IL
, I
I/O
= 0mA
-55
Other pins at V
IL
or V
IH
-70
Cycle time = 1µs
CE#
≦
0.2V and I
I/O
= 0mA
other pins at 0.2V or V
CC
-0.2V
CE# = V
IH,
other pins at V
IL
or V
IH
LL
LLE/LLI
*5
SL
CE#
≧
V
CC
-0.2V
25℃
*5
SLE
Others at 0.2V or
*5
40℃
SLI
V
CC
- 0.2V
SL
SLE/SLI
MIN.
2.7
2.4
- 0.5
- 0.5
-1
-1
2.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
3.3
-
-
-
-
-
3.0
-
20
15
10
3
1
1
1
1
1.5
1
1
*4
MAX.
5.5
V
CC
+0.5
0.6
0.8
1
1
-
0.4
50
45
40
10
3
20
30
3
4
10
20
UNIT
V
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 50pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
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