Voltage Variable Absorptive Attenuator, 30 dB
0.5 - 2 GHz
AT-110
V 2.00
Features
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q
q
q
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SO-8
Single Positive Voltage Control 0 to +5 Volts
30 dB Voltage Variable Attenuation
±2 dB Linearity from BSL
Low DC Power Consumption
Temperature Range: -40°C to +85°C
Low-Cost SOIC 8 Plastic Package
Tape and Reel Packaging Available
Fast Switching Speed
Description
M/A-COM’s AT-110 is a linear GaAs MMIC voltage
variable absorptive attenuator in a low-cost SOIC
8-lead surface mount plastic package. The AT-110 has
a faster switching speed than the AT-108 or AT-109.
The AT-110 is ideally suited for use where linear
attenuation fine tuning and very low power com-
sumption are required. Typical applications include
radio,
cellular, GPS equipment and automatic gain/level
control circuits.
The AT-110 is fabricated with a monolithic GaAs
MMIC using a mature 1-micron process. The process
features full chip passivation for increased perfor-
mance and reliability.
Ordering Information
Part Number
AT-110
AT-110TR
AT-110RTR
Package
SOIC 8-Lead Plastic Package
Forward Tape & Reel*
Reverse Tape & Reel*
*
If specific reel size is required, consult factory for part number
assignment.
Typical Electrical Specifications
1
, T
A
= +25°C
Parameter
Insertion Loss
Attenuation
Flatness
(Peak-to-Peak)
VSWR
Trise, Tfall
Ton, Toff
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, Control to 10% RF
In-band
µS
µS
mV
Test Conditions
0.5 - 1.0 GHz
1.0 - 2.0 GHz
0.5 - 16 GHz
1.0 - 26 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
Units
dB
dB
dB
dB
dB
dB
Min.
Typ.
2.8
3.3
Max.
3.0
3.6
30
25
±0.5
±1.2
2:1
0.2
0.2
70
±0.8
±1.5
1. All measurements at 1 GHz in a 50-Ω system, unless otherwise specified.The RF ports must be blocked outside of the package
from ground or any other voltage.