an
AMP
company
==
z
I
RF M’OSFET
2 - 175 MHz
Features
Power Transistor,
4OW,28V
DU2840S
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source
Gate-Source
Drain-Source
Voltage
Voltage
Current
1
1 Symbol
V DS
V GS
‘0s
PD
T,
T STG
8 JC
1
(
Rating
65
20
Units
V
V
1
*
W
“C
“C
1
A
8
125
200
-55 to +150
1.4
Power Dissipation
JunctionTemperature
StorageTemperature
Thermal Resistance
24.64
24.09
.970
.980
B
i 18.29 t 18.54 1 ,720 1 ,730
D
“CiW
E
9.47
&22
564
292
9.73
6.48
5.79
3.30
-373
.245
,222
.115
,393
255
E28
.I30
F
m-
G
Electrical Characteristics
Parameter
Drain-Source
I~~~
Drain-Source
Gate-Source
Breakdown
Voltage
at 25°C
)
)
Symbol
BV,,,
‘DSS
’05s
V GSrnHI
GM
C 15s
C 055
I
1 Min
1
55
1 Max
1
-
2.0
2.0
( Units
)
V
mA
pA
V
S
pF
pF
pF
1 dB
%
-
)
) V,,=O.OV,
V,,=28.0
v,,=20.0
V,,=lO.O
V,,=lO.O
V,=28.0
V,,=28.0
V,,=28.0
1 V,,=28.0
V,,=28.0
V,,=28.0
l,,=lO.OmA
V, V,,=O.O V
Test Conditions
I
I
Leakage Current
Leakage Current
v, v,,=o.o
v
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load MismatchTolerance
Specifications
2.0
1
6.0
-
90
80
16
V, 1,,=200.0 mA
V,
1,,=2000.0
V, F=l .O MHz
V. F=l .O MHz
V, F=l .O MHz
V, I,,=200
V, I,,=200
V, I,,=200
mA, P,,,-40.0
_.
mA, P,,=40.0
mA, P,,=40.0
W, F=l75
MHz
I
mA,
AVo,=l .O
V, 80 us Pulse
C E1c.s
--
G,
‘1D
1
13
60
-
-
-
3O:l
W, F=175 MHz
W, F=175 MHz
VSWR-T
Subject to Change Without Notice.
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America:
Tel.
Fax
(800)
(800)
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=
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Fax
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=
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