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RF MOSFET Power Transistor, SW, 12V
30
- 90 MHz
Features
l
l
l
l
l
l
FH2164
N-Channel Enhancement Mode Device
Meets CECOM Drawing A3012715
Designed for Frequency Hopping Systems
30-90
MHz
Lower Capacitances for Broadband Operation
Lower Noise Figure Than Bipolar Devices
Electrical Characteristics
at 25°C
VD,=28.0 V, F=l .O MHz’
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
* Per side
Specifications
Subject to Change Without Notice.
C ass
C RSS
GP
90
VSWR-T
13
55
-
40
pF
PF
V,,=28.0
V,,=28.0
V, F=l .O MHz’
V, F=l .O MHz’
mA, P,,.r=8.0
W, F=88 MHz
W, F=88 MHz
W, F=88 MHz
8
-
-
2O:l
dB
%
-
VD,=12.0 V, l&j00
V,,=12.0
V,,=12.0
V, l,Q=600 mA, P,,,=8.0
V, 1,0=600 mA, P0,e8.0
9-66
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
M/A-COM,
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
B
Europe:
inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
