LF2810A
RF Power MOSFET Transistor
10W, 500-1000MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
•
•
•
•
•
•
N-Channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
Applications
Broadband linear operation
500 MHz to 1200 MHz
Parameter
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
2.8
26.5
200
-55 to +150
6.6
Units
V
V
A
W
°C
°C
°C/W
LETTER
DIM
A
MILLIMETERS
MIN
20.70
14.35
13.72
6.27
6.22
6.22
1.14
2.92
1.40
1.96
3.61
.08
MAX
20.96
14.61
14.22
6.53
6.48
6.48
1.40
3.18
1.65
2.46
4.37
.15
INCHES
MIN
.815
.565
.540
.247
.245
.245
.045
.115
.055
.077
.142
.003
MAX
.825
.575
.560
.257
.255
.255
.055
.125
.065
.097
.172
.006
ABSOLUTE MAXIMUM RATINGS AT 25° C
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
TYPICAL DEVICE IMPEDANCE
F (MHz)
500
1000
1200
Z
IN
(Ω)
0.60 - j9.5
1.4 - j1.0
1.5 - j3.5
Z
LOAD
(Ω)
10.0 +j17.0
4.85 + j7.9
5.7 + j5.7
B
C
D
E
F
G
H
J
K
L
M
V
DD
= 28V, I
DQ
= 100 mA, P
OUT
= 10 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
160
-
-
-
10
50
-
Max
-
2.0
2.0
6.0
-
14
10
4.8
-
-
20:1
Units
V
mA
µA
V
mS
pF
pF
pF
dB
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 4.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 20.0 mA
V
DS
= 10.0 V , I
DS
200.0 mA , 80-30
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 100 mA, P
OUT
= 10.0 W, F =1.0 GHz
V
DD
= 28.0 V, I
DQ
= 100 mA, P
OUT
= 10.0 W, F =1.0 GHz
V
DD
= 28.0 V, I
DQ
= 100 mA, P
OUT
= 10.0 W, F =1.0 GHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
