SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6439/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
•
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
•
Built–In Matching Network for Broadband Operation Using Double
Match Technique
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Gold Metallization System for High Reliability Applications
2N6439
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS*
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
P
D
T
stg
Value
33
60
4.0
146
0.83
–65 to +200
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS*
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
33
60
4.0
—
—
—
—
—
—
—
—
2.0
Vdc
Vdc
Vdc
mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
