RF Power Amplifier IC
for 2.4 GHz ISM
MA02303GJ
Features
•
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
•
Single Positive Supply
•
Power Added Efficiency As High As 55 Percent
•
IP
3
= +43 dBm
•
Output Power 26.5 dBm @ 3.3 V
•
Output Power 28.5 dBm @ 5.0 V
•
100 Percent Duty Cycle
•
2200 to 2600 MHz Operation
•
8 Pin MSOP Full Downset Plastic Package
•
Operates Over Wide Ranges of Supply Voltage
•
Self-Aligned MSAG
®
-Lite MESFET Process
Functional Schematic
PIN 1
PIN 8
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG
®
MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power “bypass” mode and output power control
PIN Configuration
PIN
1
2
3
4
V
D1
RF
IN
/ V
G1
GND
V
G2
V
G3
GND
RF
OUT
/ V
D3
V
D2
Function
Description
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Ordering Information
Part Number
MA02303GJ-R7
MA02303GJ-R13
MA02303GJ-SMB
Description
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample test board
5
6
7
8
Package bottom is electrical and thermal ground
Absolute Maximum Ratings
1
Rating
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
Operating Temperature
Moisture Sensitivity
Symbol
V
DD
P
IN
T
J
T
STG
T
OPER
Value
5.5
10
150
-40 to +150
-40 to +100
Unit
V
mW
°C
°C
°C
JEDEC Level 1
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
