MA4P HIPAX
™
High Power PIN Diodes
V9
Features
♦
♦
♦
♦
♦
♦
♦
♦
♦
High Power Handling
Low Loss / Low Distortion
Voltage Ratings up to 1000 Volts
Passivated Chip for Low Leakage Current
Low Theta (θ) Due to Full Face Chip Bonding
Leadless Low Inductance MELF Packages
Various Package Options
Available as Chips
Fully RoHS Compliant
Package Styles
401 & 402
1072 & 1091
Description
M/A-COM Technology Solutions MELF and HIPAX
PIN diode series are designed for usage in switch
and attenuator applications requiring high power
handling and low distortion. The MELF and HIPAX
PIN diodes incorporate a fully passivated PIN diode
chip resulting in an extremely low reverse bias
leakage current. The semiconductor technology
utilized in the MELF and HIPAX families draws on
M/A-COM’s substantial experience in PIN diode
design and wafer fabrication. The result is a device
which has a thick
I-region
and long carrier lifetime
while maintaining low series resistance and
capacitance values. The chips of the MELF and
HIPAX PIN diodes are enclosed in a rugged
ceramic package and is full face bonded to metal
pins on both the anode and cathode. The result is a
low loss PIN diode with low thermal resistance due
to symmetrical thermal paths. The parts are offered
in either a HIPAX , axial leaded or
Metal Electrode
Leadless Faced (MELF)
surface mount packages
that have a rectangular outline. These rectangular
SMQ, PIN diodes are designed for high volume tape
and reel assembly. This easy to use package
design makes automatic pick and place, indexing
and assembly, extremely easy. The parallel flat
surfaces are suitable for most key jaw or vacuum
pick-up techniques. All solderable surfaces are tin
plated and compatible with industry standard reflow
and vapor phase soldering processes.
Applications
HIPAX PIN diodes are designed for use in a wide
variety of switch and attenuator applications from HF
through UHF frequencies and at power levels above
1kW, CW. The internal chip as well as each diode
assembly has been comprehensively tested and
characterized to ensure predictable and repeatable
performance.
Design Recommendations
♦
Low Distortion Attenuators
•
MA4P4301B
♦
Surface Mount Switches
•
MA4P7101F
♦
Cellular Radio Antenna Switches
•
MA4P1200, MA4P1250
Absolute Maximum Ratings
T
AMB
= +25°C
(Unless Otherwise Noted)
1,2
Parameter
Absolute Maximum
D.C. Reverse Voltage
Operating Chip Junction
Temperature
Storage Temperature
Installation Temperature
(See Tables)
-55°C to +175°C
-55°C to +200°C
+280°C for 30 Seconds
Notes
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Please refer to application note
for surface
mounting instructions.
1
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.4155721
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
