MRF1000MB 参数 Datasheet PDF下载

SEMICONDUCTOR TECHNICAL DATA

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by MRF1000MB/D

The RF Line

Microwave Pulse

Power Transistors

Designed for Class A and AB common emitter amplifier applications in the

low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

•

Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A

Output Power = 0.2 Watt

Minimum Gain = 10 dB

•

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

•

Industry Standard Package

•

Nitride Passivated

•

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

•

Internal Input Matching for Broadband Operation

MRF1000MB

0.7 W, 960–1215 MHz

CLASS A/AB

MICROWAVE POWER

TRANSISTORS

NPN SILICON

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ T

C

= 25°C (1)

Derate above 25°C

Storage Temperature Range

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

D

T

stg

Value

20

50

3.5

200

7.0

40

–65 to +150

Unit

Vdc

Vdc

Vdc

mAdc

Watts

mW/°C

°C

CASE 332A–03, STYLE 2

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case (2)

Symbol

R

θJC

Max

25

Unit

°C/W

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I

C

= 5.0 mAdc, I

B

= 0)

Collector–Emitter Breakdown Voltage

(I

C

= 5.0 mAdc, V

BE

= 0)

Collector–Base Breakdown Voltage

(I

C

= 5.0 mAdc, I

E

= 0)

Emitter–Base Breakdown Voltage

(I

E

= 1.0 mAdc, I

C

= 0)

Collector Cutoff Current

(V

CB

= 20 Vdc, I

E

= 0)

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

20

50

50

3.5

—

—

—

—

—

—

—

—

—

—

0.5

Vdc

Vdc

Vdc

Vdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 100 mAdc, V

CE

= 5.0 Vdc)

h

FE

10

—

100

—

1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Replaces MRF1000MA/D

1