SEMICONDUCTOR TECHNICAL DATA
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by MRF1004MB/D
The RF Line
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
•
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Industry Standard Package
•
Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•
Internal Input Matching for Broadband Operation
MRF1004MB
4.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
20
50
3.5
250
7.0
40
–65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
θJC
Max
25
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 5.0 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 5.0 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 5.0 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 1.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 35 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
20
50
50
3.5
—
—
—
—
—
—
—
—
—
—
0.5
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 75 mAdc, V
CE
= 5.0 Vdc)
h
FE
10
—
100
—
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 8
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
