ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
65
65
3.5
—
—
—
—
—
—
—
—
25
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
20
—
—
—
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
Collector Efficiency
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
Load Mismatch
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
GPB
η
ψ
8.5
40
9.0
45
—
—
dB
%
No Degradation in Output Power
Z5
D.U.T.
L1
C2
C3
C4
+
+
–
C1
RF INPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
RF OUTPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
µF
C4 — 100
µF,
100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε
r = 2.55, 2 Oz. Copper
.700
.150
.625
.160
.081
1.725
.105
.650
1.123
.216
1.309
1.108
.081
.644
.365
.500
0.140
2.000
.355
.081
.100
Figure 1. Test Circuit
Replaces MRF10500/D
2
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
