SEMICONDUCTOR TECHNICAL DATA
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by MRF1090MA/D
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
•
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Industry Standard Package
•
Nitride Passivated
•
Gold Metallized for Long Life and Resistance to Metal Migration
•
Internal Input Matching for Broadband Operation
MRF1090MA
90 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Peak (1)
Total Device Dissipation @ T
C
= 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
V
CBO
V
EBO
I
C
P
D
T
stg
Value
70
4.0
6.0
290
1.66
–65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332–04, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 25 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 25 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
70
70
4.0
—
—
—
—
—
—
—
—
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(I
C
= 2.5 Adc, V
CE
= 5.0 Vdc)
h
FE
10
30
—
—
NOTES:
(continued)
1. Pulse Width = 10
µs,
Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
µs
Pulse on Tektronix 576 or equivalent.
REV 9
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
