MRF10005
Microwave Power Silicon Bipolar Transistor
5.0 W, 960–1215 MHz, 28V
Features
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Guaranteed performance @1.215GHz, 28Vdc
Output power: 5.0W CW
Minimum gain = 8.5dB, 10.3dB (Typ.)
RF performance curves for 28 Vdc and 36 Vdc opera-
tion
100% tested for load mismatch at all phase angles with
10:1 VSWR
Hermetically sealed industry standard package
Silicon nitride passivated
Gold metallized, emitter ballasted for long life and re-
sistance to metal migration
Internal input matching for broadband operation
M/A-COM Products
Released - Rev. 053007
Product Image
Description and Applications
Designed for CW and long-pulsed common base amplifier
applications, such as JTIDS and Mode S, in the 0.96 to
1.215 GHz frequency range with high overall duty cycles.
CASE 336E–02, STYLE 1
Maximum Ratings
Symbol
Value
Unit
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
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Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
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Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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