SEMICONDUCTOR TECHNICAL DATA
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by MRF134/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range.
•
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Minimum Gain = 11 dB
Efficiency — 55% (Typical)
•
Small–Signal and Large–Signal Characterization
•
Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
•
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
•
Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz
•
Excellent Thermal Stability, Ideally Suited For Class A
Operation
D
MRF134
5.0 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
G
S
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
(R
GS
= 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
Value
65
65
±40
0.9
17.5
0.1
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
10
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
