SEMICONDUCTOR TECHNICAL DATA
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by MRF136Y/D
The RF MOSFET Line
RF Power
Field-Effect Transistor
N-Channel Enhancement-Mode MOSFET
Designed for wideband large–signal amplifier and oscillator applications up to
400 MHz range, in either single ended or push–pull configuration.
•
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Broadband Gain = 14 dB (Typ)
Efficiency = 54% (Typical)
•
Small–Signal and Large–Signal
Characterization
•
100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
•
Space Saving Package For
Push–Pull Circuit
Applications
•
Excellent Thermal Stability,
Ideally Suited For Class A
Operation
•
Facilitates Manual Gain
Control, ALC and
Modulation Techniques
MRF136Y
30 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FET
D
G
G
S
(FLANGE)
CASE 319B–02, STYLE 1
D
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
T
stg
T
J
Value
Val e
65
65
±40
5.0
100
0.571
–65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.75
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
