MRF134
The RF MOSFET Line: Broadband RF Power FET
5.0W, to 400MHz, 28V
Designed for wideband large–signal amplifier and oscillator
applications up to 400 MHz range.
N–Channel enhancement mode
M/A-COM Products
Released - Rev. 05202009
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Guaranteed 28V, 150 MHz performance
Output power = 5.0 watts
Minimum gain = 11 dB
Efficiency = 55% (Typical)
Small– and large–signal characterization
Typical performance at 400 MHz, 28V, 5.0W
Output = 10.6 dB gain
100% tested for load mismatch at all phase angles with 30:1 VSWR
Low noise figure: 2.0 dB (Typ.) at 200 mA, 150 MHz
Excellent thermal stability, ideally suited for Class A operation
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ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
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North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
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Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
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Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.