MRF150 参数 Datasheet PDF下载

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF150/D

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz

frequency range.

•

Specified 50 Volts, 30 MHz Characteristics

Output Power = 150 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45% (Typ)

•

Superior High Order IMD

•

IMD

(d3)

(150 W PEP) — – 32 dB (Typ)

•

IMD

(d11)

(150 W PEP) — – 60 dB (Typ)

•

100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

MRF150

150 W, to 150 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

D

G

CASE 211–11, STYLE 2

S

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Symbol

V

DSS

V

DGO

V

GS

I

D

P

D

T

stg

T

J

Value

125

125

±

40

16

300

1.71

– 65 to +150

200

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

R

θJC

Max

0.6

Unit

°C/W

NOTE —

CAUTION

— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 9

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