MRF151 参数 Datasheet PDF下载

SEMICONDUCTOR TECHNICAL DATA

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by MRF151/D

The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies

to 175 MHz. The high power, high gain and broadband performance of this

device makes possible solid state transmitters for FM broadcast or TV channel

frequency bands.

•

Guaranteed Performance at 30 MHz, 50 V:

Output Power — 150 W

Gain — 18 dB (22 dB Typ)

Efficiency — 40%

•

Typical Performance at 175 MHz, 50 V:

Output Power — 150 W

Gain — 13 dB

•

Low Thermal Resistance

•

Ruggedness Tested at Rated Output Power

•

Nitride Passivated Die for Enhanced Reliability

D

MRF151

150 W, 50 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

G

CASE 211–11, STYLE 2

S

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Symbol

V

DSS

V

DGO

V

GS

I

D

P

D

T

stg

T

J

Value

125

125

±

40

16

300

1.71

– 65 to +150

200

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

R

θJC

Max

0.6

Unit

°C/W

NOTE —

CAUTION

— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 9

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