SEMICONDUCTOR TECHNICAL DATA
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by MRF154/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
•
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz
frequency range.
MRF154
600 W, 50 V, 80 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
D
G
S
CASE 368–03, STYLE 2
(HOG PAC)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
125
125
±
40
60
1350
7.7
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.13
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
