SEMICONDUCTOR TECHNICAL DATA
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by MRF157/D
The RF Power MOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz.
•
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 21 dB (Typ)
Efficiency = 45% (Typ)
MRF157
600 W, to 80 MHz
MOS LINEAR
RF POWER FET
D
G
S
CASE 368–03, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
DGO
V
GS
I
D
P
D
T
stg
T
J
Value
125
125
±40
60
1350
7.7
–65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.13
Unit
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
