SEMICONDUCTOR TECHNICAL DATA
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by MRF16006/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
•
Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 6 Watts
Minimum Gain = 7.4 dB, @ 6 Watts
Minimum Efficiency = 40% @ 6 Watts
•
Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
•
Silicon Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
MRF16006
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Symbol
V
CES
V
EBO
I
C
P
D
T
stg
Value
60
4.0
1.0
26
0.15
–65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2)
R
θJC
6.8
°C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
1
MRF16006
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
