SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF166C/D
The RF MOSFET Line
RF Power
Field Effect Transistors
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
•
MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 20 W
Gain = 13.5 dB
Efficiency = 50%
•
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
•
Low Crss — 4.0 pF @ VDS = 28 V
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
CASE 319–07, STYLE 3
G
S
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±
20
4.0
70
0.4
– 65 to 150
200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.5
Unit
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
