SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF166W/D
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
•
Push–Pull Configuration Reduces Even Numbered Harmonics
•
Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 14 dB
Efficiency = 50%
•
Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
•
Low Crss — 4.0 pF @ VDS = 28 Volts
Designed primarily for wideband large–signal output and driver stages to
30 – 500 MHz.
MRF166W
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
1
3
5
4
FLANGE
2
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–Gate Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±
20
8.0
175
1.0
– 65 to +150
200
Unit
Vdc
Vdc
Adc
ADC
Watts
°C/W
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
R
θJC
1.0
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
1
MA-COM [ M/A-COM TECHNOLOGY SOLUTIONS, INC. ]
