MRF173CQ 参数 Datasheet PDF下载

SEMICONDUCTOR TECHNICAL DATA

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by MRF173CQ/D

The RF MOSFET Line

RF Power

Field Effect Transistor

N–Channel Enhancement Mode MOSFET

Designed for broadband commercial and military applications up to 200 MHz

frequency range. The high–power, high–gain and broadband performance of

this device makes possible solid state transmitters for FM broadcast or TV

channel frequency bands.

•

Guaranteed Performance at 150 MHz, 28 V:

Output Power = 80 W

Gain = 11 dB (13 dB Typ)

Efficiency = 55% Min. (60% Typ)

•

Low Thermal Resistance

•

Ruggedness Tested at Rated Output Power

•

Nitride Passivated Die for Enhanced Reliability

•

Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz

•

Excellent Thermal Stability; Suited for Class A Operation

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

Storage Temperature Range

Operating Temperature Range

Symbol

V

DSS

V

DGO

V

GS

I

D

P

D

T

stg

T

J

Value

65

65

±40

9.0

220

1.26

–65 to +150

200

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C

G

S

D

MRF173CQ

80 W, 28 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 316–01, STYLE 2

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

R

θJC

Max

0.8

Unit

°C/W

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (V

DS

= 0 V, V

GS

= 0 V) I

D

= 50 mA

Zero Gate Voltage Drain Current (V

DS

= 28 V, V

GS

= 0 V)

Gate–Source Leakage Current (V

GS

= 40 V, V

DS

= 0 V)

V

(BR)DSS

I

DSS

I

GSS

65

—

—

—

—

—

—

2.0

1.0

V

mA

µA

ON CHARACTERISTICS

Gate Threshold Voltage (V

DS

= 10 V, I

D

= 50 mA)

Drain–Source On–Voltage (V

DS(on)

, V

GS

= 10 V, I

D

= 3.0 A)

Forward Transconductance (V

DS

= 10 V, I

D

= 2.0 A)

V

GS(th)

V

DS(on)

g

fs

1.0

—

1.8

3.0

—

2.2

6.0

1.4

—

V

V

mhos

(continued)

NOTE —

CAUTION

— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 0

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