SEMICONDUCTOR TECHNICAL DATA
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by MRF176GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
•
Electrical Performance
MRF176GU @ 50 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ
MRF176GV @ 50 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ
•
100% Ruggedness Tested At Rated Output Power
•
Low Thermal Resistance
•
Low C
rss
— 7.0 pF Typ @ V
DS
= 50 V
MRF176GU
MRF176GV
200/150 W, 50 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
D
G
G
S
(FLANGE)
D
CASE 375–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
125
±40
16
400
2.27
–65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.44
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 mA)
Zero Gate Voltage Drain Current
(V
DS
= 50 V, V
GS
= 0)
Gate–Body Leakage Current
(V
GS
= 20 V, V
DS
= 0)
NOTE:
1. Each side of device measured separately.
REV 9
V
(BR)DSS
I
DSS
I
GSS
125
—
—
—
—
—
—
2.5
1.0
Vdc
mAdc
µAdc
1